According to a report from the American Physicists Organization Network on March 27 (Beijing time), scientists at the University of Notre Dame and Pennsylvania State University in the United States stated that they used quantum tunneling to develop tunneling performance comparable to current transistors. Field effect transistor (TFET). The latest technology is expected to solve the problem of excessive heat generation of the transistors on the chip, and to integrate more transistors on one chip to increase the computing power of electronic devices.
Transistors are the basic components of electronic devices. Over the past 40 years, scientists have mainly improved the computing power of electronic devices by integrating more transistors on a single chip. However, the current road seems to have come to an end. The industry believes that the semiconductor industry is rapidly approaching the physical limits of transistor miniaturization. The main problem with modern transistors is the generation of excessive heat.
Recent studies have shown that the TFET performance they developed is comparable to current transistors and that energy efficiency is also higher than in the past, which is expected to solve the above overheating problem.
Scientists have used electrons to "tunnel" solids to create this TFET. "Tunneling" is like magic at the human level, but at the quantum level, it is a very common behavior.
“The current transistor is like a dam with a moving gate. The speed of water flow is the strength of the current depends on the height of the door. The tunneling transistor allows us to have one,†explained Alain Schumpf, professor of electrical engineering at the University of Notre Dame. With a new type of door, current can flow through rather than over this door. In addition, we have also adjusted the thickness of the door so that the current can be turned on and off."
Suman Datta, a professor of electrical engineering at Penn State University, said: "The key to the latest technological advances is the right combination of materials we use to build semiconductors."
Xiao Baofu added that the commercialization of electronic tunneling equipment has a long history. The principle of quantum mechanic tunneling has also been used in data storage equipment. With the latest technology, in the future, a USB flash memory device may have billions of TFET devices. .
Scientists emphasized that another benefit of tunneling transistors is that using them instead of current transistor technology does not require major changes to the semiconductor industry, and many existing circuit design and circuit manufacturing infrastructures can continue to be used.
Although the energy efficiency of TFETs is inferior to that of existing transistors, the papers published by Penn State University and the research team of the University of Notre Dame in March last year have shown that the tunneling transistors have achieved a record in drive current. Progress is expected to make greater progress in the future.
Datta said: "If we achieve greater success in energy efficiency, it will be a major breakthrough in low-power integrated circuits, which in turn will increase the possibility of developing self-powered devices, self-powered devices with the same energy. The combination of capture devices is expected to enable us to develop more efficient health testing equipment, environmental smart devices, and portable medical devices.†(Reporters Liu Xia)
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